The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity. Applications: The tool must be capable of etching silicon and/or silicon-based materials for a variety of nano- and/or microscale structures with nanometre precision and high wafer-scale uniformity. The tool must be suitable for the etching of silicon-based materials with etch rates of 1 nm/min up to 15 µm/min. The tool must be equipped with reliable end-pointing, also for loadings of < 5% open area (based on 100 mm wafer), using OES or laser interferometry. The required nanometric precision of the tool is defined as the wafer-scale controllability in three-dimensional micro- and nano-machining of silicon and/or silicon-based materials. A uniform plasma density is required for highly adjustable control over the x- and y-dimensions (lateral) upon etching in the z-direction (depth), with an accuracy ± 2 nm using fluor-based chemistries with processes containing the gases Ar, O2, N2, SF6, and C4F8. The required high uniformity of the tool is defined as a uniform plasma ion density across the wafer, providing a uniform etching performance for wafer sizes of 100 mm and 150 mm, for etching a variety of nano- and/or microscale structures. The required etch performance of the tool must be achieved by a dual ICP source chamber design, utilizing a main ICP source located on top of the chamber and a second ICP source located in the side wall of the chamber close to the substrate. It is essential that the plasma zones are decoupled. A third source, called CCP or platen source, must be installed at the substrate electrode to control the ion energy. The tool must be equipped with optical emission spectrometry (OES), laser interferometry and a chiller for the processes as defined in Appendix B Schedule of Demands and Wishes with at least an electrode temperature ranging from -20°C up to 20°C.
Deadline
De termijn voor de ontvangst van de offertes was 2024-07-15.
De aanbesteding werd gepubliceerd op 2024-05-24.
Aankondiging van een opdracht (2024-05-24) Object Toepassingsgebied van de aanbesteding
Titel: European Tender Dry Etcher
Referentienummer: EB-OUT 6330
Korte beschrijving:
“The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity.
Applications:
The...”
Korte beschrijving
The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity.
Applications:
The tool must be capable of etching silicon and/or silicon-based materials for a variety of nano- and/or microscale structures with nanometre precision and high wafer-scale uniformity. The tool must be suitable for the etching of silicon-based materials with etch rates of 1 nm/min up to 15 µm/min. The tool must be equipped with reliable end-pointing, also for loadings of < 5% open area (based on 100 mm wafer), using OES or laser interferometry.
The required nanometric precision of the tool is defined as the wafer-scale controllability in three-dimensional micro- and nano-machining of silicon and/or silicon-based materials. A uniform plasma density is required for highly adjustable control over the x- and y-dimensions (lateral) upon etching in the z-direction (depth), with an accuracy ± 2 nm using fluor-based chemistries with processes containing the gases Ar, O2, N2, SF6, and C4F8.
The required high uniformity of the tool is defined as a uniform plasma ion density across the wafer, providing a uniform etching performance for wafer sizes of 100 mm and 150 mm, for etching a variety of nano- and/or microscale structures.
The required etch performance of the tool must be achieved by a dual ICP source chamber design, utilizing a main ICP source located on top of the chamber and a second ICP source located in the side wall of the chamber close to the substrate. It is essential that the plasma zones are decoupled. A third source, called CCP or platen source, must be installed at the substrate electrode to control the ion energy.
The tool must be equipped with optical emission spectrometry (OES), laser interferometry and a chiller for the processes as defined in Appendix B Schedule of Demands and Wishes with at least an electrode temperature ranging from -20°C up to 20°C.
Toon meer
Soort contract: Leveringen
Producten/diensten: Laboratoriuminstrumenten, optische en precisie-instrumenten (uitgezonderd brillen)📦
Geschatte waarde exclusief BTW: 1 050 000 EUR 💰
Beschrijving
Beschrijving van de aanbesteding:
“The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity.
Applications:
The...”
Beschrijving van de aanbesteding
The MESA+ Institute will invest in a new Dry Etch tool system to reinforce their state-of-the-art etch capabilities and etch capacity.
Applications:
The tool must be capable of etching silicon and/or silicon-based materials for a variety of nano- and/or microscale structures with nanometre precision and high wafer-scale uniformity. The tool must be suitable for the etching of silicon-based materials with etch rates of 1 nm/min up to 15 µm/min. The tool must be equipped with reliable end-pointing, also for loadings of < 5% open area (based on 100 mm wafer), using OES or laser interferometry.
The required nanometric precision of the tool is defined as the wafer-scale controllability in three-dimensional micro- and nano-machining of silicon and/or silicon-based materials. A uniform plasma density is required for highly adjustable control over the x- and y-dimensions (lateral) upon etching in the z-direction (depth), with an accuracy ± 2 nm using fluor-based chemistries with processes containing the gases Ar, O2, N2, SF6, and C4F8.
The required high uniformity of the tool is defined as a uniform plasma ion density across the wafer, providing a uniform etching performance for wafer sizes of 100 mm and 150 mm, for etching a variety of nano- and/or microscale structures.
The required etch performance of the tool must be achieved by a dual ICP source chamber design, utilizing a main ICP source located on top of the chamber and a second ICP source located in the side wall of the chamber close to the substrate. It is essential that the plasma zones are decoupled. A third source, called CCP or platen source, must be installed at the substrate electrode to control the ion energy.
The tool must be equipped with optical emission spectrometry (OES), laser interferometry and a chiller for the processes as defined in Appendix B Schedule of Demands and Wishes with at least an electrode temperature ranging from -20°C up to 20°C.
Toon meer
Hoofdlocatie of plaats van uitvoering:
“Zie documentatie” Titel
Identificatienummer van de partij: LOT-0000
Procedure Soort procedure
Open procedure ✅ Administratieve informatie
Termijn voor de ontvangst van inschrijvingen of verzoeken tot deelneming: 2024-07-15 10:00:00 📅
Voorwaarden voor de opening van de offertes: 2024-07-16 10:20:00 📅
Talen waarin inschrijvingen of aanvragen tot deelneming kunnen worden ingediend: Engels 🗣️
Juridische, economische, financiële en technische informatie Economische en financiële draagkracht
Lijst en korte beschrijving van de selectiecriteria:
“Cover for liability risk: See descriptive document”
Lijst en korte beschrijving van de selectiecriteria:
“Unqualified audit certificate without continuity section: See descriptive document” Voorwaarden voor deelname
Lijst en korte beschrijving van aandoeningen:
“Reference: See descriptive document”
Aanvullende informatie Beoordelingsorgaan
Naam: Rechtbank Overijssel
Nationaal registratienummer: 82940525
Poststad: Almelo
Land: Nederland 🇳🇱
E-mail: communicatie.rb-ove@rechtspraak.nl📧
Telefoon: (+31)0883611042📞 Informatie over elektronische workflows
Elektronische facturering wordt aanvaard
Er zal gebruik worden gemaakt van elektronische betaling
Bron: OJS 2024/S 101-311521 (2024-05-24)